发明名称 |
Method to reduce charge interface traps and channel hot carrier degradation |
摘要 |
Using deuterium oxygen during stream oxidation forms an oxidizing vapor. Since deuterium is chemically similar to hydrogen, the oxidation process takes place normally and the silicon-silicon oxide interface is concurrently saturated with deuterium. Saturating the interface with deuterium reduces the interface trap density thereby reducing channel hot carrier degradation.
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申请公布号 |
US6797644(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20010906515 |
申请日期 |
2001.07.16 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WATT VICTOR;WALDEN BETH;KIRKPATRICK BRIAN K.;RUSSELL EDMUND G. |
分类号 |
H01L29/78;C23C8/10;C23C8/16;H01L21/28;H01L21/30;H01L21/316;H01L21/8238;(IPC1-7):H01I21/31 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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