发明名称 |
Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures containing monofluoromethane and oxygen |
摘要 |
A method for etching phase shift layers of half-tone phase masks includes etching a phase shift layer by using a plasma which is obtained from CH3F and O2. A high cathode power is used for the etching. The method has a very high selectivity between the substrate and the phase shift layer, so that half-tone phase masks with a high imaging quality can be produced.
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申请公布号 |
US6797638(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20020159262 |
申请日期 |
2002.05.31 |
申请人 |
INFINEON TECHNOLOGIES AG;APPLIED MATERIALS GMBH |
发明人 |
FALK NORBERT;RUHL GUENTHER |
分类号 |
G03F1/00;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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