发明名称 |
Self-cleaning process for etching silicon-containing material |
摘要 |
A method of etching a silicon-containing material in a substrate comprises placing the substrate in a process chamber and exposing the substrate to an energized gas comprising fluorine-containing gas, chlorine-containing gas and sidewall-passivation gas. The silicon-containing material on the substrate comprises regions having different compositions, and the volumetric flow ratio of the fluorine-containing gas, chlorine-containing gas, and sidewall-passivation gas is selected to etch the compositionally different regions at substantially similar etch rates.
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申请公布号 |
US6797188(B1) |
申请公布日期 |
2004.09.28 |
申请号 |
US20000507629 |
申请日期 |
2000.02.18 |
申请人 |
SHEN MEIHUA;JIANG WEI-NAN;YAUW ORANNA;CHINN JEFFREY |
发明人 |
SHEN MEIHUA;JIANG WEI-NAN;YAUW ORANNA;CHINN JEFFREY |
分类号 |
H01L21/02;H01L21/3213;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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