发明名称 |
Process for depositing WSix layers on a high topography with a defined stoichiometry |
摘要 |
Tungsten silicide layers are formed on a substrate and a semiconductor component has deep trench capacitors with a filling of tungsten silicide. The tungsten silicide layers are deposited on the substrate at a temperature of less than 400° C. and at a pressure of less than 10 torr from the vapor phase. The vapor phase hs a tungsten-containing precursor substance and a silicon-containing precursor substance. The molar ratio of the silicon-containing precursor compound to the tungsten-containing precursor compound in the vapor phase is selected to be greater than 500.
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申请公布号 |
US6797613(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20020196698 |
申请日期 |
2002.07.16 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SELL BERNHARD;SAENGER ANNETTE;SCHULZE-ICKING GEORG |
分类号 |
H01L21/285;(IPC1-7):H01L21/443 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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