| 发明名称 |
Method of manufacturing a capacitor having tantalum oxide film as an insulating film |
| 摘要 |
A tantalum oxide film is formed on a lower conductive film by vapor-deposition, and then is treated with active oxygen species. The treated film is annealed at a temperature lower than the crystallization temperature of tantalum oxide by 10 to 80° C. in an inert atmosphere. Subsequently, an upper conductive film is formed on the annealed tantalum oxide film.
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| 申请公布号 |
US6797560(B2) |
申请公布日期 |
2004.09.28 |
| 申请号 |
US20010859513 |
申请日期 |
2001.05.18 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HOSODA KEIZO;MURAKI YUSUKE |
| 分类号 |
C23C16/40;C23C16/56;H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01L21/824 |
主分类号 |
C23C16/40 |
| 代理机构 |
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代理人 |
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| 主权项 |
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