发明名称 |
Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process |
摘要 |
A method of forming an annealed high-K metal oxide transistor gate structure is disclosed. A metal oxide layer is formed over a semiconductor substrate. The metal oxide layer undergoes a buffered annealed process in an oxygen atmosphere to anneal the metal oxide layer at or below the thermodynamic chemical equilibrium of SiO/SiO2 and at or above the thermodynamic chemical equilibrium of the metal oxide layer.
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申请公布号 |
US6797525(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20020151887 |
申请日期 |
2002.05.22 |
申请人 |
AGERE SYSTEMS INC. |
发明人 |
GREEN MARTIN L.;WILK GLEN D. |
分类号 |
H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L29/51;(IPC1-7):H01L21/00;H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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