发明名称 |
Magnetoresistive random access memory devices and methods for fabricating the same |
摘要 |
Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A contact element is formed electrically coupled to the transistor and a dielectric material is deposited within an area partially bounded by the contact element. A digit line is formed within the dielectric material, the digit line overlying a portion of the contact element. A conductive layer is formed overlying the digit line and in electrical communication with the contact element.
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申请公布号 |
US6798004(B1) |
申请公布日期 |
2004.09.28 |
申请号 |
US20030421095 |
申请日期 |
2003.04.22 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
GRYNKEWICH GREGORY W.;BUTCHER BRIAN R.;DURLAM MARK A.;TRACY CLARENCE J. |
分类号 |
G11C11/16;H01L21/00;H01L21/8246;H01L27/22;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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