| 发明名称 |
Metal structure for a phase-change memory device |
| 摘要 |
The invention relate to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilization of the chalcogenide memory material.
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| 申请公布号 |
US6797979(B2) |
申请公布日期 |
2004.09.28 |
| 申请号 |
US20030418530 |
申请日期 |
2003.04.17 |
| 申请人 |
INTEL CORPORATION |
发明人 |
CHIANG CHIEN;LEE JONG-WON;KLERSY PATRICK |
| 分类号 |
H01L27/24;H01L45/00;(IPC1-7):H01L47/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
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