发明名称 PLASMA TREATMENT CHAMBER AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE IN THE CHAMBER
摘要 FIELD: electric engineering. ^ SUBSTANCE: device has electrostatic holder for holding plate, and consumption parts highly resistant to etching and susceptible to impurity production in lower degree. Their temperature is controllable. The consumption parts have chamber insert having lower fastening section and wall arranged so that it envelops the electrostatic holder. The consumption parts also have insert holder having lower flange, flexible wall and upper flange. The flexible wall arranged so that it envelops external surface of the chamber insert holder, the flexible wall being at some distance from the chamber insert holder. Lower flange of the insert holder is allows direct heat exchange with the lower section of the chamber insert holder. Reflection ring is a consumption part mounted in heat exchange contact with the chamber insert and the insert holder. ^ EFFECT: wide range of functional applications. ^ 24 cl, 13 dwg
申请公布号 RU2237314(C2) 申请公布日期 2004.09.27
申请号 RU20010111332 申请日期 1999.09.24
申请人 发明人 UIKER TOMAS E.;MARASHIN ROBERT A.;KENNEDI UIL'JAM S.
分类号 H05H1/46;C23C16/44;H01J27/16;H01J37/00;H01J37/08;H01J37/32;H01J37/36;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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