| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film semiconductor device which efficiently forms a semiconductor thin film of large crystal grain size containing no hydrogen. SOLUTION: A polycrystalline semiconductor thin film 34 is formed on an insulating substrate 31 by a reactive thermal CVD method which utilizes a reaction energy of a plurality of different gases. Continuously, a step for making the crystal grain size of the semiconductor thin film 34 grow by energy irradiation is performed. COPYRIGHT: (C)2004,JPO&NCIPI
|
