| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which can restrain reduction in a drain current (lowering of current driving ability) involved in rewrite frequency of a nonvolatile memory element. SOLUTION: In the semiconductor device having the nonvolatile memory element, the nonvolatile memory element has a first gate electrode provided on a major surface of a semiconductor substrate interposing a first gate insulating film which functions as a charge storage part, a second gate electrode which is provided on the major surface of the semiconductor substrate interposing a second gate insulating film and is provided adjacent to the first gate electrode with its gate length along a gate length direction of the first gate electrode, a first semiconductor region of a first conductivity type which is provided to the first gate electrode side and the second gate electrode side each in an alignment direction of the first and second gate electrodes and functions as a source region and a drain region, a second semiconductor region of a first conductivity type which is provided to a region below the first gate electrode on the major surface of the semiconductor substrate and a third semiconductor region of a first conductivity type provided between the second semiconductor region and the first gate insulating film. COPYRIGHT: (C)2004,JPO&NCIPI
|
