| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device with a small layout size. SOLUTION: The nonvolatile semiconductor memory device includes a memory block 400 which is constituted of a plurality of memory cells 410 arranged in rows and columns. Each of the plurality of memory cells 410 comprises a source region, drain region, channel region formed between the source and drain regions, word gate 412 disposed opposite to the channel region, and nonvolatile memory element formed between the word gate 412 and the channel region. A vertical section of the word gate 412 has a bottom side, a side vertical to the bottom side, and a curved side connecting the bottom side and the side vertical to the bottom side. COPYRIGHT: (C)2004,JPO&NCIPI
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