| 摘要 |
PROBLEM TO BE SOLVED: To solve the possibility that the electric power consumption of a semiconductor device, having a structure wherein the base terminal and the collector terminal of a horizontal type transistor are short-circuited, is increased due to the influence of a parasitic transistor, and to contrive to reduce the power consumption. SOLUTION: In the semiconductor device having a diode constituted through a pn junction of a first semiconductor region and a second semiconductor region on a semiconductor substrate, the first semiconductor region is formed on the semiconductor substrate, and the second semiconductor region is formed above the first semiconductor region while a first electrode take-out region for connecting the first semiconductor region and an electrode is formed around the first semiconductor region so as to surround the same region, and a second electrode take-out region for connecting the first semiconductor region and the electrode is formed around the second semiconductor region so as to surround the same region. COPYRIGHT: (C)2004,JPO&NCIPI
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