| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a space saving type electrostatic protection circuit which permits the miniaturization and high integration of the semiconductor device. SOLUTION: The semiconductor device including the electrostatic protection circuit for protecting an internal circuit 12 formed on a semiconductor substrate 11 comprises a first impurity diffusion layer 20 formed on the semiconductor substrate 11 along the outer peripheral rim of the same and having p-type or n-type polarity, and a pn junction formed by contacting the first impurities diffusion layer 20 with a second impurity diffusion layer having n-type or p-type polarity different from that of the first impurity diffusion layer. COPYRIGHT: (C)2004,JPO&NCIPI
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