| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a property of a semiconductor device such as a laser diode, by developing a structure of an electrode part in which a low-resistance Ohmic electrode can be formed for a p-type GaN compound semiconductor layer. <P>SOLUTION: The semiconductor device has a contact layer consisting of a semiconductor layer consisting of the GaN compound semiconductor and a semiconductor formed on the semiconductor layer, and an electrode consisting of a metal formed on the contact layer. The band gap of the contact layer is narrowed continuously or step in step toward the electrode from the semiconductor layer side. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
