| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a mask that can reduce the displacement of a transfer pattern by controlling the internal stress of a thin film constituting the mask to a desired value, and to provide a method of manufacturing mask and a method of manufacturing semiconductor device. <P>SOLUTION: After at least one thin film is formed on one surface of a substrate, an impurity is introduced into the thin film so as to reduce the influence of the internal stress of the thin film exerted upon the transfer pattern (ST2), and the thin film is heated so that the concentration distribution of the impurity introduced into the thin film may be fixed in at least the thickness direction of the thin film (ST4). Then the substrate is worked to the supporting body of the thin film by removing at least the portion corresponding to a transmitting section from the other surface of the substrate. Thereafter, a transmitting section and a blocking section are formed along the transfer pattern by forming a charged-particle-beam transmitting section in the thin film heated after the impurity is introduced. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
