| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the integration degree of a semiconductor device wherein high integration is required. <P>SOLUTION: After an n channel MISFET is formed on the upper layer of the first surface of the insulating film 3 of a first SOI substrate 1a, the n channel MISFET is covered with an insulating film 8, and the first SOI substrate 1a and a substrate 10 are so stuck with each other that the insulating film 8 is made to face an insulating film 11 formed on a surface of the substrate 10. Continuously, the support substrate of the first SOI substrate is eliminated, and the second SOI substrate 12 wherein a semiconductor layer 15 is formed on a support substrate 13 via an insulating film 14 and the first SOI substrate are so stuck with each other that an insulating film 16 formed on a surface of the semiconductor layer 15 is made to face the insulating film 3. After the support substrate 13 and the insulating film 14 are eliminated, a p-channel MISFET is formed on the upper layer of a second surface of the insulating film 3, and the n-channel MISFET and the p-channel MISFET are stacked. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
