RADIATION-SENSITIVE RESIN COMPOSITION AND ITS MANUFACTURING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To realize patterning without extremely causing pattern defects such as microbridges, in particular, when a fine resist pattern of ≤0.2 μm dimension is formed, by using a chemically amplifying radiation-sensitive resin composition having favorable sensitivity and resolution and excellent process latitude and process stability.

SOLUTION: The chemically amplifying radiation-sensitive resin composition used has ≤1 ppm of an ultrahigh molecular weight component having ≥1,000,000 weight average molecular weight in terms of polystyrene measured by gel permeation chromatography using a multi-angle laser light scattering method, the ultrahigh molecular weight component included in an alkali-soluble resin or an alkali-insoluble or hardly soluble resin protected by an acid dissociating protecting group as the base resin in the resin composition. The composition is applied on the object 2 to be processed to form a photoresist film 3, which is exposed and developed to form a fine resist pattern 4 having ≤0.2 μm dimension. Then the object is dry etched for patterning gate electrodes, holes, grooves or the like of a semiconductor device.

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