| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prolong the life of a chip by preventing increment of the number of write-in due to erroneous write-in and rewriting. <P>SOLUTION: This nonvolatile semiconductor memory device is connected to a host 3 and data is recorded on the device. The device is characterised by being provided with: a NAND type EEPROM (electrically erasable and programable ROM) 1 provided with a memory cell array divided into blocks 2 constituted of a plurality of pages; and a control table 20 provided with information for specifying a physical block which is stored in the NAND type EEPROM 1 and in which data corresponding to a logic page specified by the host 3 is to be written, and a pointer 21 used for writing successively data from a physical page of the most source side in the block 2, or/also, data given from the host 3 and a EC code corresponding to this data are written in the NAND type EEPROM 1. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
