SEMICONDUCTOR MEMORY ELEMENT, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory element and a manufacturing method thereof wherein even though the mounting density of the semiconductor memory elements is high and its size is fine, the memory operation of its ferroelectric capacitor can be performed surely. SOLUTION: In a silicon layer 1a constituting an SOI substrate S of the semiconductor memory element, a P-conductivity impurity region (P+layer) 3a and an N-conductivity impurity region (N-layer) 3b are formed in parallel with each other. The region (P+layer) 3a is connected with a lower electrode 7A of a ferroelectric capacitor C and is to become a gate region 3 of a junction transistor T. In the region (N-layer) 3b, the channel region provided connectively between the source and drain regions 4 of the junction transistor T is formed. COPYRIGHT: (C)2004,JPO&NCIPI