| 摘要 |
PURPOSE: A gate insulating layer of a semiconductor device and a forming method thereof are provided to improve an operating speed and maintain stably stored data by forming differently each thickness of the first to the third gate insulating layers. CONSTITUTION: A high-voltage region, a low-voltage region, and a cell region are defined on a semiconductor substrate(100). The first gate insulating layer(110), the first conductive layer(130), and the first insulating layer(140) are laminated on the high-voltage region of the semiconductor substrate. The second gate insulating layer(112), the first conductive layer, and the first insulating layer are laminated on the low-voltage region of the semiconductor substrate. The third gate insulating layer(114), the second conductive layer(150), and the second insulating layer(160) are laminated on the cell region of the semiconductor substrate. A top trench mask layer(170) is formed to cover the bottom trench layer. The third gate insulating layer is thicker than the second gate insulating layer. The first gate insulating layer is thicker than the third gate insulating layer.
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