发明名称 SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED COMPACT, AND CIRCUIT BOARD FOR ELECTRONIC COMPONENT USING THE SINTERED COMPACT
摘要 <P>PROBLEM TO BE SOLVED: To provide a highly heat-conductive silicon nitride sintered compact having excellent mechanical properties, no anisotropy of thermal conductivity, and an increased thermal conductivity. <P>SOLUTION: The silicon nitride powder comprises columnar particles having a &beta;-fraction of 30 to 100%, an oxygen content of below 0.5 wt.%, a mean particle diameter of 0.2 to 10 &mu;m, an aspect ratio of 10 or lower, and grooves formed in the direction of a particle long axis. The sintered compact comprises 1 to 50 pts. wt. above silicon nitride powder, 99 to 50 pts. wt. &alpha;-silicon nitride powder having a mean particle diameter of 0.2 to 4 &mu;m, and a sintering aid comprising Mg and at least one rare earth element selected from rare earth elements (RE) including La, Y, and Yb and is characterized in that when the Mg is calculated as magnesium oxide (MgO), and the at least one element selected from rare earth elements including La, Y, and Yb is calculated as an oxide (RE<SB>x</SB>O<SB>y</SB>), the total of the contents of these oxides is 0.6 to 7 wt.%, and the weight ratio, (MgO/RE<SB>x</SB>O<SB>y</SB>), is 1 to 70. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004262756(A) 申请公布日期 2004.09.24
申请号 JP20040130790 申请日期 2004.04.27
申请人 HITACHI METALS LTD 发明人 IMAMURA TOSHIYUKI;SOFUE MASAHISA;HAMAYOSHI SHIGEYUKI
分类号 C04B35/584;C01B21/068;H05K1/03 主分类号 C04B35/584
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