| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma generation device capable of executing a suitable etching process regardless of the thickness of a workpiece, and suitably usable for the etching process for various workpieces. <P>SOLUTION: This plasma generation device is so structured that a cathode electrode 62 and an anode electrode 64 are disposed on one side facing to a processing surface of the workpiece 16, and plasma is generated between the cathode electrode 62 and the anode electrode 64 so as to etch the workpiece. The cathode electrode 62 is disposed by directing its end face to the processing surface of the workpiece 16; the anode electrode 64 is disposed by interposing an electrical insulation material 66 disposed along the outer edge of the cathode electrode 62 and by directing its end face to the processing surface of the workpiece; and a high-frequency power supply 68 for applying a high-frequency voltage between the cathode electrode 62 and the anode electrode 66 is installed. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
