发明名称 METHOD FOR CLEANING PLASMA PROCESSING APPARATUS AND SUSCEPTOR FOR PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To prolong the life of a susceptor by preventing the deterioration of a film quality due to the riding of a wafer onto sediment fixed onto the substrate placing surface of the susceptor of a plasma processing apparatus. SOLUTION: The manufacturing method of a semiconductor comprises inserting the wafer W into the chamber 1 of the plasma processing apparatus, and repeating a depositing processing and self-cleaning for deposits on a plurality of wafers W. A cloth including warm water is placed for a prescribed period on the sediment 105 fixed to the upper surface of the substrate placing surface 106 of the susceptor for absorbing moisture to lower the fixing force of the sediment 105. Thereafter, the sediment 105 is scrubbed away with a nylon scrubbing brush with the particles of abrasive. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004266147(A) 申请公布日期 2004.09.24
申请号 JP20030055848 申请日期 2003.03.03
申请人 KAWASAKI MICROELECTRONICS KK 发明人 SHIMIZU TOSHIHIRO
分类号 C23C16/44;H01L21/3065;H01L21/31;H01L21/68;H01L21/683;(IPC1-7):H01L21/31;H01L21/306 主分类号 C23C16/44
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