| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of a sink mark in a wax member when bonding a semiconductor element and a ceramic substrate or bonding the ceramic substrate and a base substrate or the like. SOLUTION: A method for manufacturing a semiconductor device is provided with a process for supplying the wax material to a part between the semiconductor element and the substrate, a process for melting the wax material, a process for holding the perimeter of the wax material to an oxidizing atmosphere in the state that the wax material is melted, and a process for solidifying the wax material after holding to a oxidizing atmosphere. Melting point of the wax material is at most 400°C, and it is desirable to include any one metal out of Sn, Pb, Bi, Zn, In, Au and Ag as main component. In the semiconductor device formed by the method, an oxide film whose thickness is at least 5 nm is formed in circumference surface of the wax member. COPYRIGHT: (C)2004,JPO&NCIPI |
