| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a capacitor and a method for manufacturing a semiconductor device capable of increasing the capacitance of a capacitor and reducing the number of processes. <P>SOLUTION: In a method for forming a capacitor with a lower electrode, a capacitor insulating film 24, and an upper electrode laminated from the underlayer in order, and a method for manufacturing a semiconductor device having such capacitor, there have a process of forming a first silicon film 21 on a substrate 11, a process of adsorbing impurities onto the surface of the first silicon film 21 to form an impurity layer 22, a process of forming a second silicon film 23 on the surface of the impurity layer 22, a process of forming a second silicon film 23 into hemispherical grains, and a process of diffusing the impurities to the first silicon film 21 and the second silicon film 23 that is formed into hemispherical grains from the impurity layer 22 to form the lower electrode by performing thermal treatment. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
