METHOD FOR GROWING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a nitride semiconductor and a nitride semiconductor substrate in which crystal defects are suppressed as compared with prior art.

SOLUTION: The method for growing the nitride semiconductor comprises the steps for: growing a first nitride semiconductor layer on a substrate and forming a first protective film which exposes the nitride semiconductor layer periodically; forming a second nitride semiconductor layer covering the first protective film by growing the second nitride semiconductor laterally on the first protective film by using the exposed first nitride semiconductor as nuclei and joining the second nitride semiconductor on the first protective film; forming a second protective film covering the junction of the second nitride semiconductor and the second nitride semiconductor layer grown laterally on both sides thereof and opening the second nitride semiconductor layer above a first window part; forming protrusions and recesses by etching the opened second nitride semiconductor layer; and growing a third nitride semiconductor by using the protrusions of the second nitride semiconductor layer as nuclei.

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