| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing process which can form a porous inorganic oxide semiconductor layer having a high conversion efficiency in a short time by using a resin substrate, allowing an electrode for photoelectric conversion and an photoelectric conversion cell using the inorganic oxide semiconductor layer to be manufactured. <P>SOLUTION: A method of manufacturing an inorganic oxide semiconductor electrode for photoelectric conversion includes a transparent substrate having a transparent conductive layer and the porous inorganic oxide semiconductor layer. The method comprises a step 1 in which inorganic oxide semiconductor particles having an average particle diameter of 5 nm or more and 500 nm or less are applied onto the transparent conductive layer to form the porous inorganic oxide semiconductor layer, a step 2 in which the transparent conductive layer and the porous inorganic oxide semiconductor layer are irradiated with a microwave in the frequency of 1 GHz or more and 300 GHz or less and in the output of 1 W or more and a specified value or less, and a step 3 in which the porous inorganic oxide semiconductor layer is exposed to a sensitized dye. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
