| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which enables formation of a semiconductor device having a metallic electrode of a high Schottky barrier in a simple manufacturing process. <P>SOLUTION: After an electrode metal formed of titanium is formed on a semiconductor layer formed of GaInP or AlGaInP formed on a semiconductor substrate, heat treatment is carried out at a temperature whereat titanate enters the semiconductor layer until change of Schottky barrier height almost stops. Thereby, a Schottky junction of high Schottky barrier is formed. When the electrode metal is formed after the surface of the semiconductor layer is etched, a junction of higher Schottky barrier can be formed. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
