| 摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam exposure device that is reduced in aberration caused by curvatures of fields or strains and enlarged in exposure range while its resolution property is maintained. SOLUTION: Of projected beam bundles 1, only the beam bundles 1 passing through openings 4 formed through an aperture 2 at equal distances from a system axis 3 (optical axis) pass through the aperture 2. The image of the aperture 2 is projected upon a mask 6 by means of an optical illumination system 5. The projected portion corresponds to a subfield. The optical illumination system 5 is provided with a magnification adjusting means 7 and can form the image of the aperture 2 on the mask 6 at an arbitrary magnification. The beams passed through the mask 6 exposes the wafer 9 and transfers the image of a pattern formed in the subfield of the mask 6 to the wafer 9 by forming images on the wafer 9 through an optical transfer system 8. Since the image of the pattern is formed on an image forming surface 11 when the luminous flux is an annular flux, a curvature-of-field adjusting means corrects a curvature of field by raising the wafer 9 to the position of the image forming surface 11. COPYRIGHT: (C)2004,JPO&NCIPI
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