| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a threshold can satisfactorily be adjusted when a material in a silicon mid gap is adopted for the gate electrode. SOLUTION: The semiconductor device is formed on an SOI substrate 4 having a support substrate 1, an insulating film 2 formed on the support substrate 1, and a single crystal Si layer 3 formed on the insulating film. The device is provided with epitaxial layers 5 formed on the single crystal Si layer and are composed of Si<SB>x</SB>Ge<SB>1-x</SB>, gate insulating films 6 formed on the epitaxial layers 5, gate electrodes 11a and 11b which are formed on the gate insulating films 6 and have metal layers or conductive metal compound layers, and diffusion layers 16 to 19 of source/drain regions which are formed below both sides of the gate electrodes and formed in the epitaxial layers. Channel regions are formed in the epitaxial layers below the gate electrodes. COPYRIGHT: (C)2004,JPO&NCIPI
|
