| 摘要 |
PROBLEM TO BE SOLVED: To suppress pass-through of impurities even if a polycrystalline silicon film is formed for forming a gate electrode. SOLUTION: Ion implantation IPI of inert gas such as Si or Ar or nitrogen is performed into the polycrystalline silicon film 3. Thus, an amorphous silicon layer 4 is formed in the polycrystalline silicon film 3. The ion implantation IP2 of impurities is performed to a semiconductor substrate 1 with the gate electrode where the amorphous silicon layer 4 is formed as a mask. Thus, source/drain impurity layers 5a and 5b are formed. COPYRIGHT: (C)2004,JPO&NCIPI
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