发明名称 |
METHOD FOR FORMING CONTACT HOLE, METHOD FOR FABRICATING THIN FILM SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE FABRICATING METHOD AND ELECTRONIC DEVICE TO FORM CONTACT HOLE WITHOUT VACUUM APPARATUS |
摘要 |
PURPOSE: A method for forming a contact hole is provided to form a contact hole by eliminating the necessity of an expensive vacuum apparatus while shortening an interval of time for forming the contact hole. CONSTITUTION: A contact hole is formed to electrically connect the first and second conductive parts through an insulation layer. A mask material(40) is formed on a contact hole region on the first conductive part. An insulation layer is formed on the entire surface of a substrate(10) except the mask material. The mask material is eliminated to form a through hole in the insulation layer.
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申请公布号 |
KR20040082280(A) |
申请公布日期 |
2004.09.24 |
申请号 |
KR20040015390 |
申请日期 |
2004.03.08 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
SATO MITSURU;YUDASAKA ICHIO |
分类号 |
H01L21/28;H01L21/336;H01L21/768;H01L29/417;H01L29/423;H01L29/45;H01L29/49;H01L29/786;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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