发明名称 METHOD FOR FORMING CONTACT HOLE, METHOD FOR FABRICATING THIN FILM SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE FABRICATING METHOD AND ELECTRONIC DEVICE TO FORM CONTACT HOLE WITHOUT VACUUM APPARATUS
摘要 PURPOSE: A method for forming a contact hole is provided to form a contact hole by eliminating the necessity of an expensive vacuum apparatus while shortening an interval of time for forming the contact hole. CONSTITUTION: A contact hole is formed to electrically connect the first and second conductive parts through an insulation layer. A mask material(40) is formed on a contact hole region on the first conductive part. An insulation layer is formed on the entire surface of a substrate(10) except the mask material. The mask material is eliminated to form a through hole in the insulation layer.
申请公布号 KR20040082280(A) 申请公布日期 2004.09.24
申请号 KR20040015390 申请日期 2004.03.08
申请人 SEIKO EPSON CORPORATION 发明人 SATO MITSURU;YUDASAKA ICHIO
分类号 H01L21/28;H01L21/336;H01L21/768;H01L29/417;H01L29/423;H01L29/45;H01L29/49;H01L29/786;(IPC1-7):H01L21/28 主分类号 H01L21/28
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