SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF TO IMPROVE RELIABILITY

摘要

PURPOSE: A silicon carbide semiconductor device is provided to improve reliability by maintaining low contact resistance between a silicon carbide layer and an electrode while improving adhesion between the electrode and an interlayer dielectric. CONSTITUTION: A semiconductor layer is made of silicon carbide. An electrode is formed on the semiconductor layer. An interlayer dielectric(11) is formed on the electrode. An interconnection passes through the interlayer dielectric to reach the electrode. The electrode includes the first electrode part in contact with the semiconductor layer and the second electrode part between the first electrode part and the interlayer dielectric.