METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH LOW LEAKAGE CURRENT

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce leakage current by implanting simultaneously dopants into a junction region between gates when forming a source/drain region. CONSTITUTION: Gates(36) are formed on a substrate(30) having a trench isolation layer(32). An LDD(Lightly Doped Drain) region is formed in the substrate. A gap-filling layer(38) is formed to fill a junction region between the gates. By anisotropic etching of the gap-filling layer, a spacer(42) is formed at both sidewalls of the gate. A source and drain region(44,46) are formed by implanting dopants into an active region of the substrate. A titanium silicide layer(48) is formed on the gate and the source/drain region. An interlayer dielectric(50) with a contact hole is formed on the resultant structure. A metal line(54) is formed in the contact hole.