METHOD FOR TESTING ION IMPLANTATION ENERGY OF ION IMPLANTATION APPARATUS TO MEASURE BOUNDARY RESISTANCE

摘要

PURPOSE: A method for testing ion implantation energy of an ion implantation apparatus is provided to confirm the ion implantation energy by measuring a boundary resistance between two wells. CONSTITUTION: The first well is formed on a semiconductor substrate. The first well is formed with the first conductive type ion implantation region. The second well corresponding to the first well is formed on the semiconductor substrate. The second well is formed by implanting the second conductive type ions of an energy condition different from the energy condition of the first conductive type ions. Ion implantation energy is tested by measuring a surface resistance of the semiconductor substrate according to an overlapping degree of the first and the second conductive type ions on a boundary region between the first and the second wells.