| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a thermal distortion due to the difference in thermal expansion between an insulation material filled in a deep trench adjacent to a component formation area and a semiconductor substrate can be prevented, and its manufacturing method. SOLUTION: The semiconductor device is provided with a first groove 6 that is formed adjacent to a component formation area 4, surrounding it in a component separation area 5 of a semiconductor substrate, a second groove 9 that is shallower than the first groove 6 and is formed adjacent to the first groove 6 in an area where the first groove 6 in the component separation area 5 of the semiconductor substrate is not formed, a silicon oxide film 7 and a polysilicon film 8 that are applied within the first groove 6, a silicon oxide films 7 and 10 that are applied within the second groove 9, and a semiconductor component provided in the component formation area 4 of the semiconductor substrate. COPYRIGHT: (C)2004,JPO&NCIPI
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