| 摘要 |
PROBLEM TO BE SOLVED: To reliably pattern a barrier metal formed on a resistor. SOLUTION: After a wet etching for patterning the barrier metal is performed, a short-termed dry etching is performed to remove CrSiN of an alloy layer formed at an interface between the barrier metal and a resistor material. Thereafter, the wet etching is performed again to remove TiW of the alloy layer. At this time, since the short-termed dry etching has been performed, TiW left behind without being removed in the initial wet etching is removed. For this reason, when a thin film resistor is patterned after that, TiW serves as a mask, so that a hindrance to the etching can be prevented. There can disappear a drawback that a residue of CrSiN or TiW is generated, or a surface unevenness of an underlying film of CrSiN is generated. A stable thin film resistor can be obtained. COPYRIGHT: (C)2004,JPO&NCIPI
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