| 摘要 |
PROBLEM TO BE SOLVED: To protect the gate insulating film from charging up at the time of forming a gate contact. SOLUTION: When the gate contact 6a on a polycrystalline silicon gate 4a is formed, charges accumulated on an interlayer insulating film 6 are set free onto the semiconductor substrate 1 through a polycrystalline silicon layer 4b at a periphery of the polycrystalline silicon gate 4a. Thus, flow-in of the charges accumulated on the interlayer insulating film 6 to the polycrystalline silicon gate 4a is reduced. COPYRIGHT: (C)2004,JPO&NCIPI
|
