发明名称 METHOD OF FORMING WIRING
摘要 PROBLEM TO BE SOLVED: To provide a method of forming wiring by which a desired wiring structure can be formed by preventing the fluctuation of the heights of resist plugs at the time of forming the wiring structure by using the dual damascene method. SOLUTION: In this method, a resist 107 for plug is degenerated by exposing the whole surface of the resist 107 and flattened by the CMP. Therefore, the heights of the resist plugs 108 can be made uniform and recessed amounts in via holes 106 and the difference in recessed amount between patterns can be reduced. Consequently, the shapes of trenches 111 formed on the via holes 106 can be formed accurately. In addition, since the resist 107 for plug is acidified when the whole surface of the resists is exposed, an effect of neutralizing an amino substance produced when a trench pattern is formed can be exhibited and poisoning can be reduced. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004265990(A) 申请公布日期 2004.09.24
申请号 JP20030052845 申请日期 2003.02.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KOBORI ETSUYOSHI;KATSUYAMA AKIKO;IWAMOTO FUMIO
分类号 H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/768
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