| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS solid-state imaging device which is diminished in size, increased in number of pixels, reduced in power consumption, increased in operation speed, and improved in image quality. SOLUTION: The CMOS solid-state imaging device is equipped with a photodiode unit 11 which carries out photoelectric conversion corresponding to a received light volume, a transfer gate 12a which reads out electric charge obtained by photoelectric conversion made by the photodiode unit 11, and peripheral transistors provided around the photodiode unit 11. Its driving method is provided, wherein a voltage applied to the transfer gate 12a is set higher than that applied to the peripheral transistors. COPYRIGHT: (C)2004,JPO&NCIPI
|
