发明名称 |
FERROELECTRIC FILM, SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING FERROELECTRIC FILM, AND SYSTEM FOR PRODUCING FERROELECTRIC FILM |
摘要 |
PROBLEM TO BE SOLVED: To increase the coercive electric field while lowering the dielectric constant of a dielectric film having a composition represented by Sr<SB>2</SB>(Ta<SB>1-x</SB>Nb<SB>x</SB>)O<SB>7</SB>(0≤x≤1). SOLUTION: A protective member 35 of the same material as that of a target 15 is fixed to the periphery of the target 15 on the inner surface of the processing chamber S in a sputtering system 1. A wafer W on which a lower conductor film of a metal oxide is formed is sputtered in the sputtering system 1 to form a ferroelectric film on the lower conductor film. The wafer W on which the ferroelectric film is formed is then heated by an annealer and the ferroelectric film is oxidized. Consequently, a conventionally unrealizable ferroelectric film having a dielectric constant of 35 and a coercive electric field exceeding 50 kV/cm can be formed. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004265915(A) |
申请公布日期 |
2004.09.24 |
申请号 |
JP20030028256 |
申请日期 |
2003.02.05 |
申请人 |
OMI TADAHIRO;TOKYO ELECTRON LTD |
发明人 |
OMI TADAHIRO;TAKAHASHI ICHIRO;YAMADA ATSUHIKO;SAKURAI HIROYUKI |
分类号 |
C23C14/06;C01G35/00;C23C14/08;H01B3/00;H01B3/12;H01L21/314;H01L21/316;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L21/316;H01L21/824 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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