发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that can prevent the occurrence of scratches by controlling the minimum dimension of a dummy pattern and, at the same time, can be manufactured efficiently by shortening polishing time, and to provide a method of manufacturing the device. SOLUTION: A process of forming an element separating area on a substrate includes a step of forming a mask by applying a resist to the substrate, a step of forming grooves in an actual element area and a dummy pattern area, respectively, by using the mask, and a step of causing insulating films to deposit in the grooves. The process also includes a step of forming the element separating area on the substrate by removing the insulating films protruded from the insides of the grooves. The width of the dummy pattern in the dummy pattern area is made smaller than the quadruple of the depth of the groove formed in the dummy pattern area. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004265989(A) 申请公布日期 2004.09.24
申请号 JP20030052844 申请日期 2003.02.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KOBORI ETSUYOSHI
分类号 H01L21/76;H01L21/3105;H01L21/762;(IPC1-7):H01L21/76 主分类号 H01L21/76
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