发明名称 ALUMINUM NITRIDE METALLIZED SUBSTRATE AND METHOD FOR MANUFACTURING IT
摘要 PROBLEM TO BE SOLVED: To provide a nitride aluminum metallized substrate capable of manufacturing a small high density circuit board with high yield by preventing the solder from flowing to a wire bonding area on the surface of a metallized layer with the solder-flow preventing part superior to heat resistance. SOLUTION: The nitride aluminum metallized substrate on which a wiring circuit is composed of by forming a metalized layer 2a on the surface of the nitride aluminum substrate 1a has a resist pattern 3a for preventing a solder flow formed on the surface of the metallized layer. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004266103(A) 申请公布日期 2004.09.24
申请号 JP20030054882 申请日期 2003.02.28
申请人 TOSHIBA CORP 发明人 YANO KEIICHI
分类号 H05K3/28;H01L23/12;H05K3/12;H05K3/34;(IPC1-7):H05K3/34 主分类号 H05K3/28
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