| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which is superior in resolution, mask linearity, and has little scum, or film thinning and SEM shrinkage, by coping with the exposure to a far-ultraviolet region making a light source of ArF or KrF in manufacture of a semiconductor device. <P>SOLUTION: The positive resist composition is decomposed by (A) the action of an acid having a specific structure expressed in general formula (A), and contains a compound generating the acid by a resin increasing solubility to an alkali developer and by (B) irradiation of an active light beam or radiation. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
