| 摘要 |
PROBLEM TO BE SOLVED: To provide an LP-CVD device which forms a BSG film of uniform boron concentration on the surface of a semiconductor wafer without using a distributing nozzle, and to provide a method for forming the BSG film of uniform boron concentration with superior reproducibility by using the device. SOLUTION: A decompression CVD device 20 comprises: a boat 4 holding a plurality of wafers to be processed 10; a reactor housing the boat 4; a heater 5 which is arranged around the reactor to heat an atmosphere in the reactor; and gas introduction pipes 2 and 3 introducing a reactant gas into the reactor. In a method for manufacturing a semiconductor device which forms a boron silicate glass (BSG) thin film on the wafer to be processed 10 by using the device 20, a source gas containing a boron (B) of concentration of 4 wt.% or more is supplied through the gas introduction pipes 2 and 3 having a spout positioned below a position where the wafer to be processed 10 is held, at a temperature of 600-800°C and a pressure of 0.1-5 Torr. COPYRIGHT: (C)2004,JPO&NCIPI
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