| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which includes a source/drain diffusion region capable of easing or preventing the diffusion of impurities inside a channel region. SOLUTION: A gate electrode 314 is formed on a substrate for forming a gate 310. A gate insulating film 312 comprises a silicon oxide film (SiO2) and is formed on a bottom surface 314 and on the lower side surface of the gate electrode 314. An epitaxial film 305 comprises silicon or silicon germanium and is formed on the substrate adjacent to the facing surfaces of the gate 310. In the epitaxial film 305, a source diffusion region 306a and a drain diffusion region 306b are formed under a spacer 318. A source 308a and a drain 308b are formed on a part, where the source/drain diffusion regions 306a, 306b are exposed, that is, the prescribed part of the epitaxial region which is not located under the spacer. A MOS transistor comprises source/drain 308a, 308b raised alternatively and silicide regions 320a, 320b, and 320c for providing the gate electrode 314 with a low-resistance contact. COPYRIGHT: (C)2004,JPO&NCIPI
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