| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical PNP-type bipolar transistor, having none of each problem related to the conventional vertical PNP-type bipolar transistor and is capable of easily incorporating in process flow of a typical standard bipolar transistor. SOLUTION: A vertical bipolar transistor (110), a manufacturing method of the transistor, and an integrated circuit which includes the transistor are provided. The vertical bipolar transistor (110) in one embodiment, can be provided with a second epitaxial layer (140) which includes at least two impurity profiles (143, 147), arranged on a first epitaxial layer (130). The vertical bipolar transistor (110) can also be provided with a collector (154), a base (156), and an emitter (158), which are arranged on or on the inside the second epitaxial layer (140). COPYRIGHT: (C)2004,JPO&NCIPI
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