| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetic tunnel junction structure which is improved to be adaptable to a high-performance magnetic RAM element, and a magnetic tunnel junction structure manufactured with the same. SOLUTION: The magnetic tunnel junction structure and the method of manufacturing the same are provided. The magnetic tunnel junction structure has a lower electrode. The lower electrode is formed of a platinum layer, a ruthenium layer, an iridium layer, a rhodium layer, an osmium layer, a palladium layer, or a layer of oxides of these, and shows smooth surface morphology. Such a smooth surface morphology improves hysteresis loop characteristics of the magnetic tunnel junction structure. In addition, since the lower electrode also serves the role of a conventional seed layer, the manufacturing process is simplified. COPYRIGHT: (C)2004,JPO&NCIPI
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