发明名称 TEST STRUCTURE FOR ON-CHIP REAL-TIME RELIABILITY TESTING
摘要 PROBLEM TO BE SOLVED: To reduce down time of a system in which an IC is used, by taking out an end-of-life flag before failure occurrs in an active IC. SOLUTION: A system with three on-chip monitoring test structures is used. A first test structure (10) monitors hot carrier degradation. A second test structure (30) monitors TDDB degradation. A third test structure (50) monitors electromigration degradation. Each of these test structures (10, 30 and 50) has logical output level. The logical output level indicates a time at which the test structure has judged that the IC has reached end-of-life. When one of the test structures outputs the end-of-life logical level, an end-of-life indicator (70) outputs a logical level showing that failure will soon occur in the IC so that it is to be exchanged. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004266243(A) 申请公布日期 2004.09.24
申请号 JP20030318386 申请日期 2003.09.10
申请人 CHARTERED SEMICONDUCTOR MFG LTD 发明人 MANNA INDRAJIT;FOO LO KENG;QIANG GUO;XU ZENG
分类号 G01R31/12;G01R31/26;G01R31/28;G01R31/30;H01L21/66;H01L23/544;(IPC1-7):H01L21/66 主分类号 G01R31/12
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